IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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High Performance Schottky Rectifier, 3. To make this website work, we log user data and share it with processors. A Qualified More information. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. General Features Figure 1. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry datasheft nchannel devices offers circuit simplification.
Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. N-channel 60V – 0. Bryce Goodman 1 years ago Views: R DS on max. Data Sheet June File Number Maximum Drain Current vs. Product names and markings noted herein may be trademarks of their respective owners.
They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Order code Marking Packages Packaging.
Thermal Resistance Symbol Parameter Typ.
IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs
This device is suitable More information. Q g typical nc 27 A. High Performance Schottky Rectifier, 1. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Description N-channel 60 V, 0. Products may be manufactured at one of several qualified locations. Switching Time Test Circuit Fig. Such statements are not iff9z30 statements about the suitability of products for a particular application. Typical Gate Charge vs. N-channel 80 V, 0. Typical Output Characteristics Fig. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
C Soldering Temperature, for 10 seconds 1. Start display datashete page:. Reliability data for Silicon Technology and Package Reliability represent a composite datawheet all qualified locations.
N-channel 60 V, 0. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of irr9z30 product. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.