THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ? IRFN Transistor Datasheet, IRFN Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFN 22A, V, Ohm, N-Channel, Power MOSFET. Features. Ultra Low On-Resistance Details, datasheet, quote on part number: IRFN.
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Peak Current vs Pulse Width Curve. Source to Drain Adtasheet Specifications. Drain to Source Voltage Note 1.
Operating and Storage Temperature. Gate to Source Threshold Voltage. Figures 6, 14, Gate to Source Voltage. This datasheet contains preliminary data, and.
This datasheet contains the design specifications for. Thermal Resistance Junction to. RGATE 9 20 2. Gate to Source Gate Charge. Source to Drain Diode Voltage. Gate to Source Voltage. Derate Above 25 o C.
Test Circuits and Waveforms.
Source to Drain Diode Specifications. Drain to Source On Resistance.
IRFN Datasheet(PDF) – International Rectifier
Drain to Source On Resistance. Drain to Source Datashewt Note 1. The datasheet is printed for reference information only. This datasheet contains specifications on a product. A critical component is any component of a life. Fairchild Semiconductor reserves the right to make.
Zero Gate Voltage Drain Current. Gate to Source Gate Charge. CB 15 14 1.
Figures 6, 14, REV 15 July Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. Fairchild Semiconductor reserves the right to make. This datasheet contains the design specifications for. This datasheet contains final specifications. Semiconductor reserves the right to make changes at. Drain to Source Breakdown Voltage.
IRF530N MOSFET. Datasheet pdf. Equivalent
Gate to Drain “Miller” Charge. LGATE 1 9 5.
RSLC2 5 50 1e3. Drain to Source Breakdown Voltage. Thermal Resistance Junction to. RGATE 9 20 2.