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Stress above one or more of the limiting values may cause permanent damage to the device. The product status of the device s described in this data sheet may have changed since this data sheet was published. Supplementary data will be published at a later date. Exposure to limiting datasgeet for extended periods may.
Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Semiconductors assumes no responsibility or liability for. The latest information is available on the Internet at URL http: For detailed information see the relevant data sheet or data handbook. Stress above one or more of the limiting. Characteristics sections of the specification is not implied.
These are stress ratings only and operation of the device. This data sheet contains data from the product specification. This data sheet contains data from the preliminary specification.
The product status of the device s described in this data sheet may have changed since this data sheet was. This data sheet contains data from the objective specification for product.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.
Semiconductors reserves the right to make changes at any time in datasheet. Exposure to limiting values for extended periods may affect device reliability. Please consult the most recently issued data sheet before initiating or completing a design.
BSN Datasheet pdf – N-channel enhancement mode vertical D-MOS transistor – Philips
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Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Philips Semiconductors reserves the right to change the.
Semiconductors customers using or selling these products. For detailed information see.